Related papers: Zero-field quantum anomalous Hall metrology as a s…
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external…
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and…
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…
The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and…
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically doped topological insulators. In these materials, precise…
Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the…
We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a…
The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…
Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for…
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field…
Topological insulators are bulk electronic insulators which possess symmetry protected gapless modes on their surfaces. Breaking the symmetries that underlie the gapless nature of the surface modes is predicted to give rise to exotic new…
Theoretically, the quantum anomalous Hall effect is characterized by a quantized Hall conductance. However, many experiments only reported the quantization of the Hall resistance, which is accompanied by a non-vanishing longitudinal…
A key step towards dissipationless transport devices is the quantum anomalous Hall effect, which is characterized by an integer quantized Hall conductance in a ferromagnetic insulator with strong spin-orbit coupling. In this work, the…
Magnetically doped topological insulators have been extensively studied over the past decade as a material platform to exhibit quantum anomalous Hall effect. Most material realizations are magnetically doped and despite material advances…