Related papers: Ultra-Low-Energy Straintronics Using Multiferroic …
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
Research in spintronics often involves generation of heat in nanoscale magnetic systems. This heat generation can be intentional, as when studying effects created by an external applied temperature difference, or unintentional, coming as a…
Refrigeration systems based on compression of greenhouse gases are environmentally threatening and cannot be scaled down to on-chip dimensions. In the vicinity of a phase transition caloric materials present large thermal responses to…
We investigate theoretically magnon-mediated superconductivity in a heterostructure consisting of a normal metal and a two-sublattice antiferromagnetic insulator. The attractive electron-electron pairing interaction is caused by an…
The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…
Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
Thermoelectric materials open a way to harness dissipated energy and make electronic devices less energy-demanding. Heat-to-electricity conversion requires materials with a strongly suppressed thermal conductivity but still high electronic…
A capacitive displacement system was constructed to measure the electric-field-induced piezoelectric strain in the simple form of either a bulk or thin film. The system can determine an AC displacement of 2 pm precisely by using a lock-in…
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the…
Superconducting devices have enabled breakthrough performance in quantum sensing and ultra-low-power computing. Nevertheless, the need for a cryo-electronics platform that can interface superconductor electronics with Complementary…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in…
There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Due to the issues associated with rare-earth elements, there arises a strong need for magnets with properties between those of ferrites and rare-earth magnets that could substitute the latter in selected applications. Here, we produce a…
As we rapidly advance through the information age, the power consumed by computers, data centers, and networks grows exponentially. This has inspired a race to develop alternative low-power computational technologies. A new adiabatic…