Related papers: Polarization-Engineered InGaN/GaN Heterojunctions …
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions…
In single-junction photovoltaic (PV) devices, the maximum achievable power conversion efficiency (PCE) is mainly limited by thermalization and transmission losses, because polychromatic solar irradiation cannot be matched to a single…
Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below…
Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of…
The p-type amorphous/ n-type crystalline silicon (P+ a-Si/N+ c-Si) heterojunction was simulated for developing the solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of…
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…
We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency…
In this study, we designed and optimized the performance of pin junction GaAs/AlGaAs heterojunction nanowire solar cell arrays. It is done by performing coupled optoelectronic simulations to find the optimal doping for the GaAs core and…
Organic heterojunction solar cells are analyzed within a minimal model that includes the essential physical features of such systems. The dynamical properties of this model, calculated using a master equation approach, account for the…
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…
In this work, Machine Learning (ML) techniques have been employed to explore the highest performing single-heteronunction thermophotovoltaic cell. Initially, traditional homo junction TPV cells have been explored using ML methodologies for…
Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot…
As a potential solution for low-cost efficient solar cells, radial junctions consisting of ZnO nanowires arrays embedded in Cu2O thin films have been theoretically modeled. Calculations have been performed to explore the geometric…
The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a…
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of…
The AlGaN/GaN quantum-well heterostructures typically exhibit a positive photoconductivity (PPC) during the light illumination. Surprisingly, we found that introducing the GaN/AlN superlattice (SL) back barrier into N-polar AlGaN/GaN…
Heterostructures based on atomically thin semiconductors are considered a promising emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells on flexible substrates. Much progress has been made in recent…
Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the…
The built-in potential of p-n junctions plays a pivotal role in charge separation, a fundamental process underlying the photovoltaic effect.However, conventional classical theories of photovoltaic behavior in p-n junctions often neglect its…