Related papers: Physical Origin of Transient Negative Capacitance …
In correlated compounds containing cations in high formal oxidation states (assigned by assuming that anions attain full valence shells), the energy of ligand to cation charge transfer can become small or even negative. This yields…
Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages…
Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single molecule level may enable novel spintronic devices. Here we report…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and…
The superconducting and magnetic properties of the (Fe/Cr/Fe)/V/Fe layered system with variable thickness of the chromium layer have been experimentally and theoretically studied. The magnetic properties of the system have been studied by…
The interplay of orbital and spin degrees of freedom is the fundamental characteristic in numerous condensed matter phenomena, including high temperature superconductivity, quantum spin liquids, and topological semimetals. In iron-based…
In the micro- and nanoscale ferroelectric samples, the formation and the growth of domains are the usual stages of the polarization switching mechanism. By assuming the weak polarization anisotropy and by solving the…
We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects.…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
The energy flux patterns of inverse Goos-Hanchen (GH) shift around the interface between air and negatively refractive photonic crystal (NRPhC) with different surface terminations is investigated. Results show that NRPhC exhibits inverse GH…
We report on the existence of temperature induced negative differential conductivity (NDC) for electrons in gaseous nitrogen. The important role of superelastic rotational collisional processes in this phenomenon is highlighted. A model…
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
In this chapter, we investigate the bending behavior of a perforated nanobeam subjected to sinusoidal loading using an efficient and computationally robust Physics-Informed Functional Link Constrained Framework with Domain Mapping (DFL-TFC)…
Negative differential thermal conductance (NDTC), a hallmark of nonlinear quantum thermal transport, plays a critical role in the design of quantum thermal devices such as thermal diodes and transistors. The Lindblad dynamics predicts that…
Charge-density-wave dynamics is studied on a submicron length scale in NbSe_3 and o-TaS_3. Regions of negative absolute resistance are observed in the CDW sliding regime at sufficiently low temperatures. The origin of the negative…
In acceptor doped ferroelectrics and in ferroelectric films and nanocomposites, defect dipoles, strain gradients, and the electric boundary conditions at interfaces and surfaces often impose internal bias fields. In this work we delicately…
Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper…
Anomalous electrocaloric effect (ECE) with decreasing temperature upon application of an electric field is known to occur in antiferroelectrics (AFEs), and previous understanding refers to the field-induced canting of electric dipoles if…