Related papers: Electron g-factor of valley states in realistic si…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
We demonstrate direct measurements of the spin-orbit interaction and Land\'e g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a…
We consider a one-dimensional spin-orbit-coupled nanowire quantum dot, driven by external electric and magnetic fields, and theoretically formulate an electric mechanism to interfere its electron orbits. Owing to the existence of spin-orbit…
We present a systematic study of interface roughness and its effect on coherent dynamical processes in quantum dots. The potential due to a sharp, flat interface lifts the degeneracy of the lowest energy valleys and yields a set of valley…
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for…
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the…
The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance…
The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results…
Motivated by the recent experiments of Amasha {\it et al.} [Phys. Rev. B {\bf 78}, 041306(R) (2008)], we investigate single electron tunneling into an empty quantum dot in presence of a magnetic field. We numerically calculate the tunneling…
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…