Related papers: Electron g-factor of valley states in realistic si…
Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Land\'e g-factor, several times larger than the bulk value - contrary to the expectation…
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can…
We study analytically and numerically the renormalization of the $g$-factor in semiconducting Rashba nanowires (NWs), consisting of a normal and superconducting section. If the potential barrier between the sections is high, a quantum dot…
A two-dimensional electron gas (2DEG) in two-valley semiconductors has two discrete degrees of freedom given by the spin and valley quantum numbers. We analyze the zero-temperature magnetic instabilities of two-valley semiconductors with…
Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are…
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain,…
We investigate the combined effect of spin-orbit scattering and electron-electron interactions on the probability distribution of $g$-factors of metal nanoparticles. Using random matrix theory, we find that even a relatively small…
In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group…
Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange…
Interacting electrons in quantum dots with large Thouless number $g$ in the three classical random matrix symmetry classes are well-understood. When a specific type of spin-orbit coupling known to be dominant in two dimensional…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…
The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating…
Within the Sommerfeld atomic model the quantization of magnetic flux through the electronic orbits is investigated together with its dependency on additional sources of magnetic fields. These sources alter the magnetic flux through the…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as…
Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
By means of a diagram technique for Hubbard operators we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g. quantum dot, modeled by the Anderson Hamiltonian with two conduction…