Related papers: A valley valve and electron beam splitter
The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state…
Valley polarized topological kink states, existing broadly in the domain wall of hexagonal lattices systems, are identified in experiments, unfortunately, only very limited physical properties being given. Using an Aharanov-Bohm…
The fourfold spin-valley degenerate degrees of freedom in bulk graphene can support rich physics and novel applications associated with multicomponent quantum Hall effects and linear conductance filtering. In this work, we study how to…
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley,…
Valley degrees of freedom are a promising resource for solid-state quantum information. However, traditional architectures rely on engineered valley energy splitting in semiconductors to utilize the valley degree of freedom as an…
Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate…
Strategically combining four structured domains creates the first ever three-way topological energy-splitter; remarkably, this is only possible using a square, or rectangular, lattice, and not the graphene-like structures more commonly used…
Propagation of an electron wave packet through a quantum point contact (QPC) defined by electrostatic gates in bilayer graphene is investigated. The gates provide a bias between the layers, in order to produce an energy gap. If the gates on…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the…