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Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or…
We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the…
Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the…
High mobility two-dimensional electron gases (2DEGs) underpin today's silicon based devices and are of fundamental importance for the emerging field of oxide electronics. Such 2DEGs are usually created by engineering band offsets and charge…
We investigate the screening effects of excess electrons in the doped layer on the mobility of a GaAs two-dimensional electron system (2DES) with a modern architecture using short-period superlattice (SL) doping. By controlling the density…
Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME)…
We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding $40\times 10^6$ cm$^2$ / (Vs). Several devices were fabricated, with the highest achieved…
In this work we present simple, physics-based models for two effects that have been noted in the fully depleted CCDs that are presently used in the Dark Energy Survey Camera. The first effect is the observation that the point-spread…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
The thermodynamic potential of an ideal nonrelativistic gas of two-dimensional electrons in crossed uniform magnetic and electric fields is constructed. For low temperatures and very weak electric fields, it is shown that the Hall…
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…
We develop a model of the nonlinear response to a DC electrical current of a two dimensional electron system(2DES) placed on a magnetic field. Based on the exact solution of the Schroedinger equation in arbitrarily strong electric and…
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium…
We propose several novel physical phenomena based on nano-scale helical wires. Applying a static electric field transverse to the helical wire induces a metal to insulator transition, with the band gap determined by the applied voltage.…
We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a…
Two-dimensional electronic spectroscopy (2DES) is one of the most powerful spectroscopic techniques, capable of attaining a nearly complete picture of a quantum system including its couplings, quantum coherence properties and its real-time…
The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
We consider free electrons in rectangular quantum dots, with either hard wall boundary conditions or anharmonic confinement. In both cases, due to finite size effects, a homogeneous electric field applied along one of the rectangular axis…
Ultra-wide bandgap (UWBG) semiconductors promise to revolutionize power electronics, yet a fundamental understanding of their interfacial electronic structure has been hindered by the absence of direct experimental observation. Here, we…