Related papers: Gate-Sensing Charge Pockets in the Semiconductor Q…
Interactions between nanoscale semiconductor structures form the basis for charge detectors in the solid state. Recent experimental advances have demonstrated the on-chip detection of single electron transport through a quantum dot (QD).…
The coherence and fidelity of quantum dot (QD) spin qubits are fundamentally limited by charge noise arising from electrically active trap states at oxide interfaces, heterostructure boundaries, and within the bulk semiconductor. These…
We present time-resolved charge sensing measurements on a GaAs double quantum dot with two proximal quantum point contact (QPC) detectors. The QPC currents are analyzed with cross-correlation techniques, which enables us to measure dot…
A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel…
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated…
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are…
A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double…
A charge qubit couples to environmental electric field fluctuations through its dipole moment, resulting in fast decoherence. We propose the p orbital (pO) qubit, formed by the single electron, p-like valence states of a five-electron Si…
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…
The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
Understanding and suppressing sources of decoherence is a leading challenge in building practical quantum computers. In superconducting qubits, low frequency charge noise is a well-known decoherence mechanism that is effectively suppressed…
We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in…
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…