Related papers: Gate-Sensing Charge Pockets in the Semiconductor Q…
Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity.…
Advancing quantum technologies necessitates an in-depth exploration of how operations generate quantum resources and respond to noise. Crucial are gates generating quantum coherence and the challenge of mitigating gate dephasing noise.…
Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We propose the implementation of the Swap Test using a charge qubit in a double quantum dot. The Swap Test is a fundamental quantum subroutine in quantum machine learning and other applications for estimating the fidelity of two unknown…
A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal…
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored…
The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a…
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual…
A scheme for coupling superconducting charge qubits via a one-dimensional superconducting transmission line resonator is proposed. The qubits are working at their optimal points, where they are immune to the charge noise and possess long…
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
We theoretically study the influence of charge noise on a controlled phase gate, implemented using two proximal double quantum dots coupled electrostatically. Using the configuration interaction method, we present a full description of the…
We consider the counting statistics of electron transport through a double quantum dot with special emphasis on the dephasing induced by a nearby charge detector. The double dot is embedded in a dissipative enviroment, and the presence of…
We consider a model of the pseudogap specifically designed to describe the underdoped cuprates and which exhibits particle-hole asymmetry. The presence of electron pockets, besides the usual hole pockets, leads to the appearance of new…
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
Resonant tunneling through identical potential barriers is a textbook problem in quantum mechanics. Its solution yields total transparency (100% tunneling) at discrete energies. This dramatic phenomenon results from coherent interference…