Related papers: Quantum Emitters in Hexagonal Boron Nitride Have S…
The ability to locally activate or generate quantum emitters in two-dimensional materials is of major interest for the realization of integrated quantum photonic devices. In particular, hexagonal boron nitride (hBN) has recently been shown…
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a…
The search for an ideal single-photon source has generated significant interest in discovering novel emitters in materials as well as developing new manipulation techniques to gain better control over the emitters' properties. Quantum…
Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have…
The ability of hexagonal boron nitride to host quantum emitters in the form of deep-level color centers makes it an important material for quantum photonic applications. This work utilizes a monolithic circular Bragg grating device to…
Hexagonal boron nitride (hBN), a two-dimensional (2D) material, garners interest for hosting bright quantum emitters at room temperature. A great variety of fabrication processes have been proposed with various yields of quantum emitters.…
Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal…
The coherent control of a two-level system is among the most essential challenges in modern quantum optics. Understanding its fundamental limitations is crucial, also for the realization of next generation quantum devices. The quantum…
Cooperative phenomena stemming from radiation-field-mediated coupling between individual quantum emitters are presently attracting broad interest for on-chip photonic quantum memories and long-range entanglement. Common to these…
Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic…
Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration…
Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum,…
Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as…
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from…
Solid-state quantum emitters play a vital role in advancing quantum technologies, particularly in quantum computation and communication, where single-photon polarization acts as a fundamental information carrier. Precise polarization…
The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect…
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is…
Atomic vacancy defects in single unit cell thick hexagonal boron nitride are of significant interest because of their photophysical properties, including single-photon emission, and promising applications in quantum communication and…
Hexagonal boron nitride (hBN) is an emerging material for use in quantum technologies, hosting bright and stable single photon emitters (SPEs). The B-center is one promising SPE in hBN, due to the near-deterministic creation methods and…
Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…