Hexagonal boron nitride (hBN) is an emerging material for use in quantum technologies, hosting bright and stable single photon emitters (SPEs). The B-center is one promising SPE in hBN, due to the near-deterministic creation methods and regular emission wavelength. However, incorporation of B-centers in high-quality crystals remains challenging, typically relying on additional post-growth methods to increase creation efficiency. Here, we have demonstrated controlled carbon doping of hBN during growth, using a metal flux based method to increase the efficiency of B-center creation. Importantly, single B-centers with g(2)(0)<0.5 were able to be generated in the as-grown hBN when carbon additions during growth exceeded 2.5 wt.% C. Resonant excitation measurements revealed linewidths of 3.5 GHz with only moderate spectral diffusion present, demonstrating the applicability of the as-grown hBN as a host for high quality B-centers.
@article{arxiv.2502.15171,
title = {Quantum Emitters in Flux Grown hBN},
author = {Evan Williams and Angus Gale and Jake Horder and Dominic Scognamiglio and Milos Toth and Igor Aharonovich},
journal= {arXiv preprint arXiv:2502.15171},
year = {2025}
}