Quantum emitters in layered hexagonal boron nitride (hBN) have recently attracted a great attention as promising single photon sources. In this work, we demonstrate resonant excitation of a single defect center in hBN, one of the most important prerequisites for employment of optical sources in quantum information application. We observe spectral linewidths of hBN emitter narrower than 1 GHz while the emitter experiences spectral diffusion. Temporal photoluminescence measurements reveals an average spectral diffusion time of around 100 ms. On-resonance photon antibunching measurement is also realized. Our results shed light on the potential use of quantum emitters from hBN in nanophotonics and quantum information.
@article{arxiv.1708.08600,
title = {Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride},
author = {Toan Trong Tran and Mehran Kianinia and Minh Nguyen and Sejeong Kim and Zai-Quan Xu and Alexander Kubanek and Milos Toth and Igor Aharonovich},
journal= {arXiv preprint arXiv:1708.08600},
year = {2017}
}