Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Abstract
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step towards deterministic quantum photonic circuits in hBN.
Keywords
Cite
@article{arxiv.2304.00130,
title = {Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide},
author = {Domitille Gérard and Michael Rosticher and Kenji Watanabe and Takashi Taniguchi and Julien Barjon and Stéphanie Buil and Jean-Pierre Hermier and Aymeric Delteil},
journal= {arXiv preprint arXiv:2304.00130},
year = {2023}
}