Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creation and assignment of colour centres in hexagonal boron nitride for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.
@article{arxiv.2407.11754,
title = {Hexagonal boron nitride based photonic quantum technologies},
author = {Madhava Krishna Prasad and Mike P. C. Taverne and Chung-Che Huang and Jonathan D. Mar and Ying-Lung Daniel Ho},
journal= {arXiv preprint arXiv:2407.11754},
year = {2024}
}