Related papers: An efficient and reliable growth method for epitax…
Atomically flat, epitaxial, and stoichiometric thin films of the electronically phase separated compound (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ were grown on as-received and treated NdGaO$_{3}$ substrates by fine tuning of…
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga$_2$O$_3$ at a growth rate of ~1 ${\mu}$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized…
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by…
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion…
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers,…
Using kinetic Monte-Carlo simulations of a Solid-on-Solid model we investigate the influence of step edge diffusion (SED) and evaporation on Molecular Beam Epitaxy (MBE). Based on these investigations we propose two strategies to optimize…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band…
The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer…
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental…
The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation…
Metal-insulator transitions and superconductivity in rutile-structured oxides hold promise for advanced electronic applications, yet their thin film synthesis is severely hindered by limited substrate options. Here, we present three single-…
Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit…
We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived…
In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen…
The use of coherent x-ray beams has been greatly developing for the past decades. They are now used by a wide scientific community to study biological materials, phase transitions in crystalline materials, soft matter, magnetism, strained…
Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as…
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only…
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By…
We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te…