Related papers: A Thermodynamic Perspective of Negative-capacitanc…
We analyze the interaction of an electromagnetic spike (one cycle) with a thin layer of ferroelectric medium with two equilibrium states. The model is the set of Maxwell equations coupled to the undamped Landau-Khalatnikov equation, where…
A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially- dependent is developed. This model is used to explain experimental data…
We formulate a general theory of the dielectric response of a lattice with a structural transition and a polarization instability due to a soft-optic mode coupled to low energy electronic excitations by the electromagnetic fields. the…
Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting…
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…
The coexistence of different ferroelectric phases enables the tunability of the macroscopic properties and extensive applications from piezoelectric transducers to nonvolatile memories. Here we develop a thermodynamic model to predict the…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…
The polarization and density modulation associated with antiferroelectric ordering is studied experimentally as a function of temperature in two ferroelectric nematic liquid crystals, the prototypical single compound (DIO) and a commercial…
The linear response of two-dimensional electron gas in a perpendicular magnetic field in the presence of a spatially dependent classically smooth electrostatic potential is studied theoretically, by application of the Kubo formula for…
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…
A self-consistent stochastic model of domain structure formation in a uniaxial ferroelectric, quenched from a high-temperature paraelectric phase to a low-temperature ferroelectric phase, is developed with an account of the applied electric…
We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
The question whether ferroelectricity (FE) may coexist with a metallic or highly conducting state, or rather it must be suppressed by the screening from the free charges, is the focus of a rapidly increasing number of theoretical studies…
Thermal fluctuation conductivity for a layered superconductor in perpendicular magnetic field is treated in the frame of the self-consistent Hartree approximation for an arbitrarily strong in-plane electric field. The simultaneous…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
Phenomenological equations describing the Seebeck, Hall, Nernst, Peltier, Ettingshausen, and Righi-Leduc effects are numerically solved for the temperature, electric current, and electrochemical potential distributions of semiconductors…
In this work we present a model for the photoconductivity of two-dimensional electron system in a perpendicular homogeneous magnetic field, a weak lateral superlattice, and exposed to millimeter irradiation. The model includes the microwave…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
Based on renormalization group arguments we establish that for a superconductor in the presence of a weak external magnetic field, $B$, the dependence on $B$ and the deviation from the critical temperature, $\tau$, of a thermodynamic…