Related papers: A Thermodynamic Perspective of Negative-capacitanc…
We consider magnetic properties of the planar structure consisting of a ferromagnetic metal, diluted magnetic semiconductor and the quantum well (by the example of the hybrid heterostructure Fe--Ga(Mn)As--InGaAs). In the framework of the…
The nature of Mean Field Solutions to the Equations of Motion of the Chern--Simons Landau--Ginsberg (CSLG) description of the Fractional Quantum Hall Effect (FQHE) is studied. Beginning with the conventional description of this model at…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Non-damped oscillations of the magnetization vector of a ferromagnetic system subject to a spin polarized current and an external magnetic field are studied theoretically by solving the Landau-Lifshitz-Gilbert equation. It is shown that the…
In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an $electrostatic$ field inside a superconductor over the so-called London penetration depth, $\lambda_L$. Despite a few…
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity.…
We calculate energy spectra of a two-dimensional electron system in a perpendicular magnetic field and periodic potentials of short periods. The Coulomb interaction is included within a screened Hartree-Fock approximation. The electrostatic…
We study ferromagnetic transition in three-dimensional double-exchange model containing impurities. The influence of both spin fluctuations and impurity potential on conduction electrons is described in coherent potential approximation. In…
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to…
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
We present a review of our recent work in extending the successful dynamical mean-field theory from the equilibrium case to nonequilibrium cases. In particular, we focus on the problem of turning on a spatially uniform, but possibly time…
We consider a multiferroic chain with a linear magnetoelectric coupling induced by the electrostatic screening at the ferroelectric/ferromagnet interface. We study theoretically the dynamic ferroelectric and magnetic response to external…
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…
Superconductivity (SC) occurring at low densities of mobile electrons is still a mystery since the standard theories do not apply in this regime. We address this problem by using a microscopic model for ferroelectric (FE) modes, which…
The thermodynamics of Dirac fields under the influence of external electromagnetic fields is studied. For perturbations which act only for finite time, the influence of the perturbation can be described by an automorphism which can be…
Fundamental flaws in the Heisenberg Hamiltonian are highlighted in the context of its application to BCC Fe, including the particular issues arising when modelling lattice defects. Exchange integrals are evaluated using the magnetic force…
Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic…
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…