Related papers: Quantum-confined Stark effect in band-inverted jun…
Specific properties, such as surface Fermi arcs, features of quantum oscillations and of various responses to a magnetic field, distinguish Dirac semimetals from ordinary materials. These properties are determined by Dirac points at which a…
Understanding the mechanism of ferromagnetism in ferromagnetic topological insulators (TIs) is a key to realize exotic time-reversal-symmetry-broken quantum phases. However, electronic states relevant to the ferromagnetism are highly…
We study the transport properties of Dirac fermions in a graphene-based double-barrier structure composed of two tilted-cone regions separated by a central pristine graphene region. Using the transfer matrix method, we systematically…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
The low-energy excitations in many condensed matter and metamaterial systems can be well described by the Dirac equation. The mass term associated with these collective excitations, also known as the Dirac mass, can take any value and is…
The energy bands and the global density of states are computed for superconductor / normal-metal superlattices in the clean limit. Dispersion relations are derived for the general case of insulating interfaces, including the mismatch of…
We study the properties of an ultracold Fermi gas loaded in a square optical lattice and subjected to an external and classical non-Abelian gauge field. We calculate the energy spectrum of the system and show that the Dirac points in the…
We report electric field-controlled modulation of the Fermi surface topology and explore its effects on the superconducting state in alternating-angle twisted quadrilayer graphene (TQG). The unique combination of flat and dispersive bands…
Discovery of topologically protected surface states, believed to be immune to weak disorder and thermal effects, opened up a new avenue to reveal exotic fundamental science and advanced technology. While time-reversal symmetry plays the key…
Multilayer VO$_2$/TiO$_2$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) are studied with first principles density functional methods including structural relaxation. Quantum confinement of the {\it half metallic}…
We consider the effect of the Coulomb interaction in strained graphene using tight-binding approximation together with the Hartree-Fock interactions. The many-body energy dispersion relation, anisotropic Fermi velocity renormalization and…
Double Dirac fermions have recently been identified as possible quasiparticles hosted by three-dimensional crystals with particular non-symmorphic point group symmetries. Applying a combined approach of ab-initio methods and dynamical mean…
3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in…
We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve…
We study the interface physics of bipartite magnetic materials deposited on a topological insulator. This comprises antiferromagnets as well as ferrimagnets and ferromagnets with multiple magnetic moments per unit cell. If an energy gap is…
Since the discovery of topological insulators (TIs)1,2, the peculiar nature of their chiral surface states has been experimentally demonstrated both in bulk and in film materials with open boundaries3,4. Closed boundary on a TI surface may…
Four-component massive and massless Dirac fermions in the presence of long range Coulomb interaction and chemical potential disorder exhibit striking fermionic quantum criticality. For an odd number of flavors of Dirac fermions, the sign of…
It is shown that the conductance $G$ of the quantum microconstriction in the metal with an opened Fermi surface as a function of the contact diameter undergoes the jumps $e^{2}/h$ of the opposite sign. The negative jumps is the result of…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
We investigate the superconducting proximity effect through graphene in the long diffusive junction limit, at low and high magnetic field. The interface quality and sample phase coherence lead to a zero resistance state at low temperature,…