Related papers: Comparative Analysis of Current Component in InGaN…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
We investigate the current cross-correlations in a double quantum dot based Cooper pair splitter coupled to one superconducting and two ferromagnetic electrodes. The analysis is performed by assuming a weak coupling between the double dot…
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and…
The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three sets of dye molecules, such as derivatives of naphthalimide…
The efficiency of an organic light-emitting diode (OLED) is fundamentally governed by the spin of recombining electron-hole pairs (singlet and triplet excitons), since triplets cannot usually emit light. The singlet-triplet energy gap, a…
We evaluate the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and holes. Using the proposed model, we derive analytical…
Quantum dot light-emitting diodes (QLEDs) are promising building blocks for prospective lighting and display applications. Despite the significant advancements achieved towards increasing the efficiency and brightness levels of QLEDs, the…
Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the…
In this work we consider a current carrying two level quantum dot(QD) that is coupled to a single mode phonon bath. Using self-consistent Hartree-Fock approximation, we obtain the I-V curve of QD. By considering the linear response of our…
Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) under different process…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…
This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the…
We investigate coherent electron transport through a parallel circuit of two quantum dots, each of which has a single tunable energy level. Electrons tunneling via each dot from the left lead interfere with each other at the right lead. It…
Organic photovoltaics (OPVs) are promising candidates for future sustainable technologies, including applications within the renewable energy sector, such as solar cells and indoor light recycling, and photodetection. However, the…
Broadband visible light emitting, three-dimensional hexagonal annular microstructures with InGaN/GaN multiple quantum wells (MQWs) are fabricated via selective-area epitaxial growth. The single hexagonal annular structure is composed of not…
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…
We review recent work on resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We derive a general expression for the current flowing in the structure and discuss the…
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the…
Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active region approach can improve the wall-plug efficiency…