English

A new Low Gain Avalanche Diode concept: the double-LGAD

Instrumentation and Detectors 2023-07-27 v1

Abstract

This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 \textmu{m}, 35 \textmu{m} and 50 \textmu{m}.

Keywords

Cite

@article{arxiv.2307.14320,
  title  = {A new Low Gain Avalanche Diode concept: the double-LGAD},
  author = {F. Carnesecchi and S. Strazzi and A. Alici and R. Arcidiacono and N. Cartiglia and D. Cavazza and S. Durando and M. Ferrero and A. Margotti and L. Menzio and R. Nania and B. Sabiu and G. Scioli and F. Siviero and V. Sola and G. Vignola},
  journal= {arXiv preprint arXiv:2307.14320},
  year   = {2023}
}

Comments

arXiv admin note: text overlap with arXiv:2208.05717