Related papers: Comparative Analysis of Current Component in InGaN…
The shot-noise spectrum of a quantum dot p-i-n junction embedded inside a three-dimensional photonic crystal is investigated. Radiative decay properties of quantum dot excitons can be obtained from the observation of the current noise. The…
We report first-principles calculations of the inelastic current-voltage (I-V) characteristics of a gold point contact and a molecular junction in the nonresonant regime. Discontinuities in the I-V curves appear in correspondence to the…
Based on Keldysh non-equilibrium Green function method, we have investigated spin current production in a hybrid T-shaped device, consisting of a central quantum dot connected to the leads and a side dot which only couples to the central…
A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked in…
Single-photon emitters integrated into quantum optical circuits will enable new, miniaturized quantum optical devices. Here, we numerically investigate semiconductor quantum dots embedded to low refractive index contrast waveguides. We…
We fabricate a highly efficient colour conversion light emitting diode consisting of surface-patterned blue emitters and semiconductor colloidal nanocrystal quantum dots (NQDs). Electrically injected carriers in the blue emitter (donor) are…
We fabricated polygonal nanoholes in the top p-GaN layer of the InGaN/GaN light-emitting diode, followed by the deposition of Au/Al metal thin film within the nanoholes to create metal microcavities, thereby constructing the surface plasmon…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…
The current-voltage characteristics through a metallic quantum dot which is well coupled to a metallic lead are measured. It is shown that the I-V curves are composed of two contributions. One is a suppression of the tunneling conductivity…
We propose a new method to measure the coherence time of superconducting phase qubits based on the analysis of the magnetic-field dependent dc nonlinear Andreev current across a high-resistance tunnel contact between the qubit and a dirty…
We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between…
A self-consistent method for calculating electron transport through a molecular device is proposed. It is based on density functional theory electronic structure calculations under periodic boundary conditions and implemented in the…
Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2…
We have investigated ion current rectification properties of a recently prepared bipolar nanofluidic diode. This device is based on a single conically shaped nanopore in a polymer film whose pore walls contain a sharp boundary between…
The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including…
In a quantum Hall interferometer, the dependence of the signal on source-drain voltage is controlled by details of the edge physics, such as the velocities of edge modes and the interaction between them and with screening layers. Such…
Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-ray diffraction is extensively used to evaluate the crystalline quality, the chemical composition and the residual strain in…
Recent reports indicate that perovskite based light emitting diodes (LEDs) have achieved an external quantum efficiency (EQE) of 32% - rather an internal quantum efficiency close to 100%. Much of this improved performance is attributed to…
Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and…
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and…