Related papers: Time- and spatially-resolved magnetization dynamic…

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…

We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…

Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…

Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force.…

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…

We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed…

Current induced spin-orbit torques (SOTs) in ferromagnet/non-magnetic metal heterostructures open vast possibilities to design spintronic devices to store, process and transmit information in a simple architecture. It is a central task to…

In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…

Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…

We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…

The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…

The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…

Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…

Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free…

We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle…

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…

Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…

Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that…

The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The…