Related papers: Shot noise detection in hBN-based tunnel junctions
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
Monolayer hexagonal boron nitride (hBN) has recently become the focus of intense research as a material to host quantum emitters. Although it is well known that such emission is associated with point defects, so far no conclusive…
The shot noise in tunneling experiments reflects the Poissonian nature of the tunneling process. The shot noise power is proportional to both the magnitude of the current and the effective charge of the carrier. Shot noise spectroscopy thus…
Charge transfer in a tunnel junction is studied under dc and ac voltage bias using quantum shot noise. Under dc voltage bias $V$, spectral density of noise measured within a very large bandwidth enables to deduce the current-current…
Crystal defects in the two-dimensional insulator hexagonal boron nitride (hBN) can host localised electronic states that are candidates for applications in quantum technology, yet the precise chemical and structural nature of the defects…
The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic…
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride…
A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly…
Spin-dependent transport through a multilevel quantum dot weakly coupled to ferromagnetic leads is analyzed theoretically by means of the real-time diagrammatic technique. Both the sequential and cotunneling processes are taken into…
We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics.…
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…
We report measurements of the low frequency current fluctuations of a tunnel junction placed at very low temperature biased by a time-dependent voltage $V(t)=V(1+\cos 2\pi\nu t)$. We observe that the excess noise generated by the ac…
We show that shot noise can be used for studies of hopping and resonant tunnelling between localised electron states. In hopping via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$…
In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low…
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other…
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity of 2D insulators in the thickness control provides an ideal…
We consider a tunnel junction between two arbitrary non-linear systems in any dimension, which can be different. We show that the tunneling charge can be detected using three alternative methods based on current measurements. Besides being…
We have observed that the shot noise of tunnel current, I, in GaSb-AlSb-InAs-AlSb-GaSb double-barrier structure under a magnetic field can exceed 2qI. The measurements were done at T=4K in fields up to 5T parallel to the current. The noise…