Related papers: Shot noise detection in hBN-based tunnel junctions
We study quantum-mechanically the frequency-dependent current noise of a tunnel-junction coupled to a nanomechanical oscillator. The cases of both DC and AC voltage bias are considered, as are the effects of intrinsic oscillator damping.…
We present a resistance bridge which uses a SQUID to measure the shot noise in low impedance samples. The experimental requirements are high DC bias currents (typically 10mA) together with high AC sensitivity (pA/VHz). This system is used…
Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band…
We have developed a broadband scanning tunnelling microscope capable of conventional, low frequency (<10 kHz), microscopy as well spectroscopy and shot-noise detection at 1 MHz. After calibrating our AC circuit on a gold surface, we…
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here, we report two clear differences in their physical…
Hexagonal boron nitride (hBN) is an emerging layered material that plays a key role in a variety of two-dimensional devices, and has potential applications in nanophotonics and nanomechanics. Here, we demonstrate the first cavity…
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…
We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission.…
We report the observation of enhanced spin dependent shot noise in magnetic tunnel barriers, suggesting transport through localized states within the barrier. This is supported by the existence of negative magnetoresistance and structure in…
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…
Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling…
We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high $I_cR_n$-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional…
Visible and infra-red light emitted at a Ag-Ag(111) junction has been investigated from tunneling to single atom contact conditions with a scanning tunneling microscope. The light intensity varies in a highly nonlinear fashion with the…
Charge transport in superconducting junctions at finite voltages is governed by Andreev reflections, including multiple Andreev reflections, which are processes that enable multiple charge transfer, a hallmark that shot noise can directly…
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior…
We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard…
We propose an electromechanical transducer based on a resonant-tunneling configuration that, with respect to the standard tunneling transducers, allows larger tunneling currents while using the same bias voltage. The increased current leads…
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend…
We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given…