Related papers: Phase locking the spin precession in a storage rin…
The effect of an additional quasi-resonant drive on the dynamics of the ring-shaped incoherently pumped polariton condensates carrying angular momentum (vorticity) is studied theoretically. Numerical simulations of the 2D and 1D…
Shanghai Synchrotron Radiation Facility (SSRF) is a 3.5 GeV storage ring with a bunch rate of 499.654 MHz, harmonic number of 720, and circumference of 432 meters. SSRF injection works at 3.5 GeV, where the multi-bunch instabilities limit…
We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically-injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at…
We demonstrate the time reversal Aharonov-Casher (AC) effect in small arrays of mesoscopic semiconductor rings. By using an electrostatic gate we can control the spin precession rate and follow the AC phase over several interference…
With the aim to study spin dependence of pion production near threshold, an internal target facility and a forward detector have been installed in the Cooler synchrotron ring at IUCF. The detector system comprises scintillators and wire…
We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…
A spin decoherence mechanism is proposed for localized electrons. The irregular phonon phase disturbances originated from phonon relaxation can influence electron spin precession with a net effect of spin phase decay. A quantitative…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
We report the demonstration of phase coherence and control for the recently developed "light storage" technique. Specifically, we use a pulsed magnetic field to vary the phase of atomic spin excitations which result from the deceleration…
Polarized protons have never been accelerated to more than about $25$GeV. To achieve polarized proton beams in RHIC (250GeV), HERA (820GeV), and the TEVATRON (900GeV), ideas and techniques new to accelerator physics are needed. In this…
We present an experimental study of phase-locking in a stochastic magnetic oscillator. The system comprises a magnetic tunnel junction with a superparamagnetic free layer, whose magnetization dynamics is driven with spin torques through an…
Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…
In a vortex-state magnetic nano-disk, the static magnetization is curling in the plane, except in the core region where it is pointing out-of-plane, either up or down leading to two possible stable states of opposite core polarity p.…
The recoil proton polarization has been measured in the p (\vec e,e'\vec p) pi^0 reaction in parallel kinematics around W = 1232 MeV, Q^2 = 0.121 (GeV/c)^2 and epsilon = 0.718 using the polarized c.w. electron beam of the Mainz Microtron.…
Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to…
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per…
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an…
Under negative feedback, the quality factor Q of a radio-frequency magnetometer can be decreased by more than two orders of magnitude, so that any initial perturbation of the polarized spin system can be rapidly damped, preparing the…