Related papers: Tuning InP self-assembled quantum structures to te…
Photonic integrated circuits find ubiquitous use in various technologies, from communication, to computing and sensing, and therefore play a crucial role in the quantum technology counterparts. Several systems are currently under…
As a system with both profound physics and promising application potentials, the strain-induced self-assembled semiconductor nanostructures have been investigated for decades of years. The optical and electrical properties of this system…
A ring of sub-wavelength spaced dipole-coupled quantum emitters features extraordinary optical properties when compared to a one-dimensional chain or a random collection of emitters. One finds the emergence of extremely subradiant…
In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
We investigate the spin properties of charge carriers in vertically coupled InAs/InAlGaAs quantum dots grown by molecular beam epitaxy, emitting at telecom C-band wavelengths, with a silicon $\delta$-doped layer. Using time-resolved…
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour…
Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum…
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two…
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for…
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these…
Photoelectron spectra of aromatic anhydrides and imides like PTCDA (perylene-tetracarboxylic dianhydride), PTCDI (perylene-tetracarboxylic diimide), and NDCA (naphthalene-dicarboxylic anhydride) on smooth single crystal surfaces show…
Topological insulators (TIs) present a neoteric class of materials, which support delocalised, conducting surface states despite an insulating bulk. Due to their intriguing electronic properties, their optical properties have received…
We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs…
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the…
Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were…
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological…
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to…