Related papers: Material developments and domain wall based nanose…
The depinning of a domain wall in ferromagentic metal via macroscopic quantum tunneling is studied based on the Hubbard model. The dynamics of the magnetization verctor is shown to be governed by an effective action of Heisenberg model with…
Domain walls in nano-constrictions are investigated with a focus on thermal properties. In general, the magnetization component perpendicular to the easy axis which in a domain wall usually occurs has a value different from the easy-axis…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic…
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy,…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
The magnetic properties and magnetization dynamics of polycrystalline ultra-thin Co layers were investigated using a broadband ferromagnetic resonance (FMR) technique at room temperature. A variable thickness (1 nm $\leq t \leq$ 10 nm) Co…
Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
A detailed analysis of damping and noise due to a {\it sd}-interaction in a thin ferromagnetic film sandwiched between two large normal metal layers is carried out. The magnetization is shown to obey in general a non-local equation of…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…
In this work we present an ab initio scheme based on linear response theory of exchange torque correlation, implemented into the real-space Korringa-Kohn-Rostoker (RS-KKR) framework to calculate diagonal elements of the…
We explore the impact of Fe80B20 inserted at both Co$_{20}$Fe$_{80}$B$_{20}$/MgO interfaces of dual-MgO free layers (FLs) in bottom-pinned magnetic tunnel junctions (MTJs). MTJ stacks are annealed for 30 min at 350 $^\circ$C and 400…