Related papers: Material developments and domain wall based nanose…
An ab initio scheme based on the Kubo-Greenwood linear response theory of exchange torque correlation is presented to calculate intrinsic Gilbert damping parameters in magnets of reduced dimensions. The method implemented into the…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…
Heterostructures of superconducting and ferromagnetic materials are of fundamental interest because of the mutual interaction of antagonistic kinds of ordering at the S-F interface. Normally, the superconducting transition temperature Tc…
Field-free switching of perpendicular magnetization has been observed in an epitaxial L1$_1$-ordered CoPt/CuPt bilayer and attributed to spin-orbit torque (SOT) arising from the crystallographic $3m$ point group of the interface. Using a…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs),…
The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO interface is important to interpret the strong annealing temperature dependence of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel junctions,…
Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are expected to play a key role in the next generation of current and electric field switched memory and logic devices. In this study we use Kerr microscopy alongside electrical…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel…
By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of…
We study the enhancement of the ferromagnetic relaxation rate in thin films due to the adjacent normal metal layers. Using linear response theory, we derive the dissipative torque produced by the s-d exchange interaction at the…