Related papers: Photon-gated spin transistor
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates…
Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
Spin waves are excitations in ferromagnetic media that have been proposed as information carriers in hybrid spintronic devices with much lower operation power than conventional charge-based electronics. Their wave nature can be exploited in…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical…
We study gated field effect transistors (FETs) with an eccentric Corbino-disk geometry, such that the drain spans its circumference while the off-center inner ring acts as a source. An AC THz potential difference is applied between source…
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…
Light polarization can conveniently encode information. Yet, the ability to steer polarized optical fields is notably demanding but crucial to develop practical methods for data encryption and to gather fundamental insights into…
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective…
We propose the scheme of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of the ferromagnetic-nonmagnetic contact is played by a spatially confined cavity polariton BEC. The…
In this theoretical investigation, we analyze light-induced nonlinear spin Hall currents in a gated single-layer 1T$'$-WTe$_2$, flowing transversely to the incident laser polarization direction. Our study encompasses the exploration of the…