Related papers: Photon-gated spin transistor
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET,…
We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…
Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
Spin-polarized electron beam sources enable studies of spin-dependent electric and magnetic effects at the nanoscale. We propose a method of creating spin-polarized electrons on an integrated photonics chip by laser driven nanophotonic…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped…
We show that the edge of a two-dimensional topological insulator can be used to construct a solid state Stern-Gerlach spin-splitter. By threading such a Stern-Gerlach apparatus with a magnetic flux, Ahranov-Bohm like interference effects…
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction…
Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin…
Harnessing the unique features of topological materials for the development of a new generation of topological based devices is a challenge of paramount importance. Using Floquet scattering theory combined with atomistic models we study the…
Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, wherein spin-polarised bands crossing the Fermi level can…
PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…