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Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…

Topological insulators in the Bi2Se3 family have an energy gap in the bulk and a gapless surface state consisting of a single Dirac cone. Low frequency optical absorption due to the surface state is universally determined by the fine…

Materials Science · Physics 2015-03-17 Xiao Zhang , Jing Wang , Shou-Cheng Zhang

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to…

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films…

Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy…

Bismuth telluride - Bi(2)Te(3)- and related compounds have recently attracted strong interest owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these…

Materials Science · Physics 2015-06-03 K. M. F. Shahil , M. Z. Hossain , V. Goyal , A. A. Balandin

Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…

Mesoscale and Nanoscale Physics · Physics 2013-01-01 Pouyan Ghaemi , Roger Mong , Joel E. Moore

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…

Mesoscale and Nanoscale Physics · Physics 2014-03-04 Li Zhang , Merav Dolev , Qi I. Yang , Robert H. Hammond , Bo Zhou , Alexander Palevski , Yulin Chen , Aharon Kapitulnik

We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level.…

Mesoscale and Nanoscale Physics · Physics 2017-01-10 William S. Whitney , Victor W. Brar , Yunbo Ou , Yinming Shao , Artur R. Davoyan , D. N. Basov , Ke He , Qi-Kun Xue , Harry A. Atwater

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…

Bismuth selenide (Bi2Se3) is a good topological insulator (TI) with its surface band Dirac point inside the bulk bandgap. However, Bi2Se3 films grown by molecular beam epitaxy (MBE) often require tuning of Fermi level near the Dirac point…

Mesoscale and Nanoscale Physics · Physics 2025-09-11 Shu-Wei Wang , Hang Chi , Jui-Che Chung

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band…

Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…

We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films…

Strongly Correlated Electrons · Physics 2016-12-12 Radha Krishna Gopal , Deepak K. S. Ambast , Sourabh Singh , Jit Sarkar , Bipul Pal , Chiranjib Mitra

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…

In light of the rise of transition metal dichalcogenides as 2D semiconductors for device applications, band engineering becomes very important from an application point of view. In many of these materials, such as the canonical example of…

Materials Science · Physics 2026-05-14 Maciej Bazarnik , Thorsten Deilmann , Marta Przychodnia , Anika Schlenhoff

Integration of organic semiconductors into flexible electronics requires that their optoelectronic properties remain stable under mechanical deformation. Among these, the optical band gap governs exciton generation and limits photovoltaic…

Materials Science · Physics 2025-11-13 Mahya Ghorab , Ayush K. Ranga , Arnulf Materny , Veit Wagner , Mojtaba Joodaki

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators…

Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states…

Materials Science · Physics 2024-06-19 Saadia Nasir , Walter J. Smith , Thomas E. Beechem , Stephanie Law