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Hexagonal boron nitride (h-BN) is deposited on Si <100> wafer ($\approx$20 cm2) via Plasma Enhanced Chemical Vapor Deposition (PECVD) using a ns-pulsed N2/Ar Micro Hollow Cathode Discharge (MHCD) as a microplasma source. For the first time,…

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…

Monolayer hexagonal boron nitride is a prototypical planar 2-dimensional system material and has been the subject of many investigations of its exceptional vibrational, spectroscopic and transport properties. The lattice thermal…

Materials Science · Physics 2025-06-18 José Pedro Alvarinhas Batista , Matthieu J. Verstraete , Aloïs Castellano

Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is…

We have employed noise thermometry for investigations of thermal relaxation between the electrons and the substrate in nanowires patterned from 40-nm-thick titanium film on top of silicon wafers covered by a native oxide. By controlling the…

Mesoscale and Nanoscale Physics · Physics 2017-09-13 Teemu Elo , Pasi Lähteenmäki , Dmitri Golubev , Alexander Savin , Konstantin Arutyunov , Pertti Hakonen

The relatively low thermal conductivity of biodegradable polylactic acid (PLA) has limited its applications in various fields. To address this issue, the incorporation of nanofillers, such as boron nitride nanosheets (BNNSs), has emerged as…

Materials Science · Physics 2024-02-08 Ghazal Jamirad , Abbas Montazeri , Ali Rajabpour

Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal,…

Understanding water behaviour on 2D materials is crucial for sensing, microfluidics, and tribology. While water/graphene interactions are well studied, water on hexagonal boron nitride (h-BN) remains largely unexplored. Despite structural…

Mesoscale and Nanoscale Physics · Physics 2025-11-26 Philipp Seiler , Anthony Payne , Neubi F. Xavier , Louie Slocombe , Marco Sacchi , Anton Tamtögl

The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since…

Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal…

Mesoscale and Nanoscale Physics · Physics 2021-01-12 Zhun-Yong Ong , Yongqing Cai , Gang Zhang , Yong-Wei Zhang

We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 Olivier Bourgeois , T. Fournier , J. Chaussy

Friction is one of the main sources of dissipation at liquid water/solid interfaces. Despite recent progress, a detailed understanding of water/solid friction in connection with the structure and energetics of the solid surface is lacking.…

Mesoscale and Nanoscale Physics · Physics 2015-03-19 Gabriele Tocci , Laurent Joly , Angelos Michaelides

Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simulations to evaluate both the specific heat of $MoS_{2}$ as…

Mesoscale and Nanoscale Physics · Physics 2019-08-02 Saurabh V. Suryavanshi , Alexander J. Gabourie , Amir Barati Farimani , Eric Pop

Low thermal conductance of metal contacts is one of the main challenges in thermal management of nanoscale devices of graphene and other 2D materials. Previous attempts to search for metal contacts with high thermal conductance yielded…

Applied Physics · Physics 2018-12-13 Weidong Zheng , Bin Huang , Hongkun Li , Yee Kan Koh

Porous materials provide a large surface to volume ratio, thereby providing a knob to alter fundamental properties in unprecedented ways. In thermal transport, porous nanomaterials can reduce thermal conductivity by not only enhancing…

Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its…

Applied Physics · Physics 2019-11-12 Jerome A. Cuenca , Soumen Mandal , Malcolm Snowball , Adrian Porch , Oliver A. Williams

Boundary-engineering in nanostructures has the potential to dramatically impact the development of materials for high-efficiency conversion of thermal energy directly into electricity. In particular, nanostructuring of semiconductors can…

Materials Science · Physics 2016-10-04 Giuseppe Romano , Alexie M. Kolpak

The development of large-scale quantum systems increasingly relies on the close integration of heterogeneous components such as qubits, control electronics, and readout circuits, making thermal management at cryogenic temperatures a central…

Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the…

Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics,…

Mesoscale and Nanoscale Physics · Physics 2020-01-07 Yanan Wang , Jaesung Lee , Xu-Qian Zheng , Yong Xie , Philip X. -L. Feng