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Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still…

Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by x-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 C. All through the…

Mesoscale and Nanoscale Physics · Physics 2019-07-03 Satoru Suzuki , Yuichi Haruyama

We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe$_2$ Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We…

Mesoscale and Nanoscale Physics · Physics 2021-10-25 L. J. Stanley , Hsun-Jen Chuang , Zhixian Zhou , M. Koehler , J. Yan , D. Mandrus , Dragana Popović

Employing the density-functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride (H$_2$BN) has a direct-band gap of 2.96 eV in the blue-light region while the pristine…

Superconductivity · Physics 2021-10-04 Takat B. Rawal , Ling-Hua Chang , Hao-Dong Liu , Hong-Yan Lu , C. S. Ting

Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the…

Materials Science · Physics 2017-01-04 Yoshiaki Hattori , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor…

The phonon dispersion, density of states, Gr\"{u}neisen parameters, and the lattice thermal conductivity of single- and multi-layered boron nitride were calculated using first-principles methods. For the bulk {\it h}-BN we also report the…

Materials Science · Physics 2017-11-17 Ransell D'Souza , Sugata Mukherjee

Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes…

Graphene nanosheets (GNS) paper is widely regarded as a promising candidate for heat dissipation due to its outstanding thermal conductivity. However, the accompanied high electrical conductivity makes it unfavorable for thermal management…

Mesoscale and Nanoscale Physics · Physics 2023-05-08 Xiaojuan Tian

This study focuses on amorphous boron nitride ($\rm \alpha$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects.…

The thermal properties of two-dimensional (2D) materials, like MoS$_2$, are known to be affected by interactions with their environment, but this has primarily been studied only with SiO$_2$ substrates. Here, we compare the thermal…

Materials Science · Physics 2022-05-20 Alexander J. Gabourie , Cagil Koroglu , Eric Pop

Understanding interfacial thermal transport is essential for improving thermal management in high-speed power electronic devices, where the efficient removal of excess heat is a critical challenge. In this study, a machine learning…

Materials Science · Physics 2025-10-01 Lei Zhang , Fei Tian , Ke Chen , Zhongbo Yan , Kun Cao

We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the…

Materials Science · Physics 2007-09-13 Y. Osone

GaN/AlN interfaces are essential in advanced high-power and high-frequency electronic devices, where effective thermal management is crucial for optimal performance and reliability. This work investigates the thermal boundary conductance…

Mesoscale and Nanoscale Physics · Physics 2025-05-16 Hao Zhou , Khalid Zobaid Adnan , Wyatt Allen Jones , Tianli Feng

We study the relaxation of a thermal grating in multilayer materials with interface thermal resistances. The analytical development allows for the nu- merical determination of this thermal property in Approach to Equilibrium Molecular…

Materials Science · Physics 2018-05-31 Pier Luca Palla , Sonia Zampa , Evelyne Lampin , Fabrizio Cleri

The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted…

Instrumentation and Detectors · Physics 2010-11-02 V. Yefremenko , G. Wang , V. Novosad , A. Datesman , J. Pearson , R. Divan , C. Chang , T. Downes , J. McMahon , L. Bleem , A. Crites , S. S. Meyer , J. E. Carlstrom

Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed…

In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the…

Graphene was recently proposed as a material for heat removal owing to its extremely high thermal conductivity. We simulated heat propagation in silicon-on-insulator circuits with and without graphene lateral heat spreaders. Numerical…

Materials Science · Physics 2010-02-06 Samia Subrina , Dmitri Kotchetkov , Alexander A. Balandin

Transferring graphene flakes onto hexagonal boron nitride (h-BN) has been the most popular approach for the fabrication of graphne/h-BN heterostructures so far. The orientation between graphene and h-BN lattices, however, are not…

Materials Science · Physics 2019-12-05 Hadi Arjmandi-Tash