Related papers: Passivation and characterization of charge defects…
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to…
We report on noise measurements in a quantum dot in the presence of Kondo correlations. Close to the unitary limit, with the conductance reaching 1.8e2/h, we observed an average backscattered charge of e*~5e/3, while weakly biasing the…
Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the…
Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moir\'e materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the…
We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show…
With the advent of quantum technologies comes the requirement of building quantum components able to store energy to be used whenever necessary, i.e. quantum batteries. In this paper we exploit an adiabatic protocol to ensure a stable…
Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric properties of hafnia in the context of its application as a…
We employ shot noise measurements to characterize the effective charge of quasiparticles, at filling factor nu=1/3 of the fractional quantum Hall regime, as they scatter from an array of identical weak backscatterers. Upon scattering,…
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
A charged parallel plate capacitor will create particle-antiparticle pairs by the Schwinger process and discharge over time. We consider the full quantum discharge process in 1+1 dimensions including backreaction, when the electric field…
Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is…
The obstructed atomic insulators are insulators with both atomic limits and boundary states. In this work, we study the obstructed atomic insulators under correlation. We use the symmetry indicators by constructing many-body wavefunctions…
With the reported synthesis of a fully planar 2D silicon carbide (SiC) allotrope, the possibilities of its technological applications are enormous. Recently, several authors have computationally studied the structures and electronic…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Defects in semiconductors can exhibit multiple charge states, which can be used for charge storage applications. Here we consider such charge storage in a series of oxygen deficient phases of TiO$_2$, known as Magn\'eli phases. These…
We use high-precision spectroscopy and detailed theoretical modelling to determine the form of the coupling between a superconducting phase qubit and a two-level defect. Fitting the experimental data with our theoretical model allows us to…
A Quantum Antidot electrometer has been used in the first direct observation of the fractionally quantized electric charge. In this paper we report experiments performed on the integer i = 1, 2 and fractional f = 1/3 quantum Hall plateaus…
We explain recent experimental observations on effective charge of edge states tunneling through a quantum point contact in the weak backscattering regime. We focus on the behavior of the excess noise and on the effective tunneling charge…
We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…