Related papers: Passivation and characterization of charge defects…
We discuss the implementation of quasiparticle calculations for point defects on semiconductor surfaces and, as a specific example, present an ab initio study of the electronic structure of the As vacancy in the +1 charge state on the…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas…
It has been recently shown that non-Abelian defects with localized parafermion zero modes can arise in conventional Abelian fractional quantum Hall (FQH) states. Here we propose an alternate route to creating, manipulating, and measuring…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
A solvable quantum $LC$ circuit with charge discreteness is studied. Two discrete spectral branches are obtained: (i) the normal branch corresponding to a charged capacitor with integer effective charge $k=q_{e}n$ ($q_{e}$ elementary…
Solid-state point defects are attracting increasing attention in the field of quantum information science, because their localized states can act as a spin-photon interface in devices that store and transfer quantum information, which have…
Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes employed for conventional chips, once the QP design is…
Quantum antidots (QAD) are attractive for manipulating quasiparticles in quantum Hall (QH) systems. Here, we form a QAD in the integer and fractional QH regimes at nominal Landau-level filling factor $\nu$ = 2, 1, and 2/3 using a submicron…
We present a comprehensive and integrated model-independent ab initio study of the structural, cohesive, electronic, and optical properties of silicon quantum dots of various morphologies and sizes in the framework of all-electron static…
Charge profiles in liquid electrolytes are of crucial importance for applications, such as supercapacitors, fuel cells, batteries, or the self-assembly of particles in colloidal or biological settings. However, creating localised (screened)…
Charge excitations in a two dimensional electron gas, under a quantizing magnetic field and in the fractional quantum Hall effect regime, flow in one dimensional-like strips along the edges of the sample. These excitations (quasiparticles)…
We present a comprehensive study of the vacancy in bulk silicon in all its charge states from 2+ to 2-, using a supercell approach within plane-wave density-functional theory, and systematically quantify the various contributions to the…
Topological defects play a key role in nonequilibrium phase transitions, ranging from birth of the early universe to quantum critical behavior of ultracold atoms. In solids, transient defects are known to generate a variety of hidden orders…
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect…
Many cell types spontaneously order like nematic liquid crystals, and, as such, they form topological defects. While defects with topological charge $\pm$1/2 are common in cell monolayers, the defects with charge $\pm$1, relevant in the…
We discuss the properties of few electrons and electron-hole pairs confined in coupled semiconductor quantum dots, with emphasis on correlation effects and the role of tunneling. We shall discuss, in particular, exact diagonalization…
Recent advances in interpreting the most accurate to-date measurement of atomic parity violation in Cs are reviewed. The inferred nuclear weak charge, Q_W = - 72.65(28)_expt (36)_theor, agrees with the prediction of the standard model at 1…
We study a class of defect quantum field theories where the quantum field theory in the 3+1-dimensional bulk is a free photon and charged matter and the interactions of the photons with the charges occur entirely on a 2+1-dimensional…
We construct the holographic dual of an electrically charged, localised defect in a conformal field theory at strong coupling, by applying a spatially dependent chemical potential. We find that the IR behaviour of the spacetime depends on…