Related papers: Variable-range-hopping conduction processes in oxy…
Charge transport in disordered organic semiconductors occurs by hopping of charge carriers between localized sites that are randomly distributed in a strongly energy dependent density of states. Extracting disorder and hopping parameters…
Systematic studies of transport properties in deoxygenated Y(1-x)CaxBa2Cu3O6.1 series allowed to propose a diagram of conductivity mechanisms for this system. At intermediate temperature a variable range hopping (VRH) in 2 dimensions…
An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both…
For the low-temperature electrical conductance of a disordered {\it quantum insulator} in $d$-dimensions, Mott \cite{mott} had proposed his Variable Range Hopping (VRH) formula, $G(T) = G_0 {\rm exp}[-(T_0/T)^{\gamma}]$, where $G_0$ is a…
We study the effect of impurities on the ground state and the low-temperature dc transport in a 1D chain and quasi-1D systems of many parallel chains. We assume that strong interactions impose a short-range periodicicity of the electron…
We report observation of electric-field-driven resistive transition at a characteristic threshold field $E_{th}(T)$ across a temperature range 10-200 K in an off-stoichiometric composite of (~80 vol%) W- and (~20 vol%) Z-type hexaferrites.…
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K…
The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
Mott's variable range hopping (v.r.h.) is the phonon-induced hopping of electrons in disordered solids (such as doped semiconductors) within the regime of strong Anderson localization. It was introduced by N.~Mott to explain the anomalous…
Mott variable-range hopping is a fundamental mechanism for electron transport in disordered solids in the regime of strong Anderson localization. We give a brief description of this mechanism, recall some results concerning the behavior of…
We investigate the effect of a metal plate on the variable range hopping (VRH) conductivity of a two dimensional electron-glass (EG) system. The VRH conductivity is known to have a stretched exponential dependence on temperature, with an…
Sr2VO{3-delta}FeAs superconductors with different oxygen deficiencies have been successfully fabricated. It is found that the superconducting transition temperature drops down monotonically with the increase of oxygen deficiency. The…
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…
Transport measurements on thin films of NdNiO$_3$ reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well…
A semi-phenomenological theory of variable-range hopping (VRH) is developed for two-dimensional (2D) quasi-one-dimensional (quasi-1D) systems such as arrays of quantum wires in the Wigner crystal regime. The theory follows the phenomenology…
Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440…
The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction…