Related papers: Spin Transfer Torque Driven Coupled Oscillators fo…
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for…
We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…
The emerging Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications,…
We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their…
This paper presents a novel software driven voltage tuning method that utilises multi-purpose Ring Oscillators (ROs) to provide process variation and environment sensitive energy reductions. The proposed technique enables voltage tuning…
This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable…
We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the…
The mutual interaction between the different eigenmodes of a spin-torque oscillator can lead to a large variety of physical mechanisms from mode hopping to multi-mode generation, that usually reduce their performances as radio-frequency…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present…
We propose a mechanism to use scanning tunneling microscopy (STM) for direct measurements of the two-electron singlet-triplet exchange splitting $J$ in diatomic molecular systems, unsing the coupling between the molecule and the substrate…
Arrays of spin-torque nano-oscillators are promising for broadband microwave signal detection and processing, as well as for neuromorphic computing. In many of these applications, the oscillators should be engineered to have equally-spaced…
The concept of spin torque driven high frequency magnetization dynamics has opened up the field of spintronics to non-linear physics, potentially in complex networks of dynamical systems. In the scarce demonstrations of synchronized…
The smart transformer (ST) implemented using power electronics converters, has the capability of independent voltage control and reactive power isolation between its primary and secondary terminals. This capability provides a flexibility in…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
The magnetization dynamics of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert equation. We derived the analytical…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
The bilayer heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics.…
Radio-frequency (rf) scanning tunneling microscopy has recently been advanced to methods such as single-atom spin resonance. Such methods benefit from a frequency-independent rf voltage amplitude across the tunnel junction, which is…
We investigate the suitability of nearly half-metallic ferrimagnetic quaternary Heusler alloys, CoCrMnZ (Z=Al, Ga, Si, Ge) to assess the feasibility as electrode materials of MgO-based magnetic tunnel junctions (MTJ). Low magnetic moments…