Related papers: Spin Transfer Torque Driven Coupled Oscillators fo…
Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel…
Time-resolved scanning Kerr microscopy (TRSKM) was used to study precessional magnetization dynamics induced by a radio frequency (RF) current within a Al$_2$O$_3$/Py(5 nm)/Pt(6 nm)/Au(150 nm) spin Hall nano-oscillator structure. The Au…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF)…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
We demonstrate that the synchronization of an array of electrically coupled spin torque nano-oscillators (STNO) modelled by Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation can be enhanced appreciably in the presence of a common external…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular…
We present an experimental study of phase-locking in a stochastic magnetic oscillator. The system comprises a magnetic tunnel junction with a superparamagnetic free layer, whose magnetization dynamics is driven with spin torques through an…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around a point contact in spin-valves. Theory predicts frequency-tuning by currents occurs at constant orbital radius, so an exceptional agility is…
We demonstrate the efficient modulation of flux-tunable superconducting resonators (FTRs) using flip-chip or on-chip-based input coils. The FTRs we use are aluminum-based quarter-wave coplanar waveguide resonators terminated with 100um or…
This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a…
Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…