As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents.
@article{arxiv.2404.10334,
title = {Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design},
author = {Rafaella Fiorelli and Mona Rajabali and Roberto Méndez-Romero and Akash Kumar and Artem Litvinenko and Teresa Serrano-Gotarredona and Farshad Moradi and Johan Åkerman and Bernabé Linares-Barranco and Eduardo Peralías},
journal= {arXiv preprint arXiv:2404.10334},
year = {2024}
}