CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability

M. Zahedinejad; H. Mazraati; H. Fulara; J. Yue; S. Jiang; A. A. Awad; J. Åkerman

doi:10.1063/1.5022049

CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability

Applied Physics 2018-04-18 v1

Authors: M. Zahedinejad , H. Mazraati , H. Fulara , J. Yue , S. Jiang , A. A. Awad , J. Åkerman

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Abstract

We demonstrate low-operational-current W/Co $_{20}$ Fe $_{60}$ B $_{20}$ /MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the $\beta$ -phase W ( $\theta_{SH}$ = -0.53), a very low threshold current density of 3.3 $\times$ 10 $^{7}$ A/cm $^2$ can be achieved. Together with their very wide frequency tunability (7-28 GHz), promoted by a moderate perpendicular magnetic anisotropy, this makes HiR-Si/W/CoFeB based SHNOs potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.

Keywords

spin Hall nano-oscillators CMOS compatibility frequency tunability W/CoFeB/MgO high resistive silicon spin Hall angle microwave signal generation

Cite

@article{arxiv.1803.03032,
  title  = {CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability},
  author = {M. Zahedinejad and H. Mazraati and H. Fulara and J. Yue and S. Jiang and A. A. Awad and J. Åkerman},
  journal= {arXiv preprint arXiv:1803.03032},
  year   = {2018}
}

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6 pages, 4 figures

CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability

Abstract

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