Related papers: High-modulation-efficiency InGaAsP/Si hybrid MOS o…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS…
Programmable photonic integrated circuits (PICs) have recently emerged as an important technology for quantum information science and artificial neural networks. In particular, PICs with MEMS-based modulators have the advantages of…
Performance optimization associated with optical modulators requires reasonably accurate predictive models for key figures of merit. Interleaved PN-junction topology offers the maximum mode/junction overlap and is the most efficient…
Meeting the escalating demands of data transmission and computing, driven by artificial intelligence (AI), requires not only faster optical transceivers but also advanced integration technologies that can seamlessly combine photonic and…
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of…
Optical modulators are required to have high modulation bandwidths and a compact footprint. In this paper we experimentally demonstrate a novel Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator, which is realized by an asymmetric…
Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm,…
The exponential growth of artificial intelligence (AI) workloads is driving an urgent demand for optical interconnects with ultrahigh bandwidth, energy efficiency, and scalability. Silicon photonics, with its CMOS compatibility and…
Extremely low-loss silicon nitride integrated circuits is a potential platform for a growing number of frontier applications in quantum technologies, high-performance and analog computing, nonlinear optics, light detection and ranging…
Physical challenges at the device and interconnect level limit both network and computing energy efficiency. While photonics is being considered to address interconnect bottlenecks, optical routing is still limited by electronic circuitry,…
Stable narrow-linewidth light sources play a significant role in many precision optical systems. Electro-optic laser frequency stabilization systems, such as the well-known Pound-Drever-Hall (PDH) technique, have been key components of…
Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes,…
In high-performance RF photonic systems, the Electro-Optic (EO) modulators play a critical role as a key component, requiring low SWaP-C and high linearity. While traditional lithium niobate (LiNbO$_3$) Mach-Zehnder Modulators (MZMs) have…
We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE-TM modes in a silicon-on-insulator (SOI) waveguide integrated with a GeSe phase change material (PCM) layer. The SOI waveguide's dimensions are…
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…