Related papers: Ion-Beam-Induced Defects in CMOS Technology: Metho…
Direct-write processes enable the alteration or deposition of materials in a continuous, directable, sequential fashion. In this work we demonstrate an electron beam direct-write process in an aberration-corrected scanning transmission…
Ion beam has been used in cancer treatment, and has a unique preferable feature to deposit its main energy inside a human body so that cancer cell could be killed by the ion beam. However, conventional ion accelerator tends to be huge in…
Solid electrolytes (SEs) for sodium-based superionic conductors (NaSICON) are widely recognized for their excellent ionic conductivity and application in sodium based energy storage systems. While considerable effort has been made to…
We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. Our program incorporates methods for reducing computational…
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented.…
Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation…
Practical knowledge about troubleshooting and error handling in trapped-ion systems remains largely undocumented and held within individual labs, creating a barrier to cross-disciplinary collaboration towards engineering scalable systems.…
Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole…
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…
Predicting the dramatic changes in material properties caused by irradiation damage is key for the design of future nuclear fission and fusion reactors. Self-ion implantation is an attractive tool for mimicking the effects of neutron…
Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly…
Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping…
Magnesium atoms embedded in superfluid helium nanodroplets have been identified to arrange themselves in a metastable network, refered to as foam. In order to investigate the ionization dynamics of this unique structure with respect to a…
Ion beam analysis techniques are among the most powerful tools for advanced material characterization. Despite their growing relevance in a widening number of fields, most ion beam analysis facilities still rely on the oldest accelerator…
Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronic industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity…
Directed Energy Deposition (DED) offers significant potential for manufacturing complex and multi-material parts. However, internal defects such as porosity and cracks can compromise mechanical properties and overall performance. This study…
A reentrant temperature dependence of the thermoresistivity $\rho_{\mathrm{xx}}(T)$ between an onset local superconducting ordering temperature $T_\mathrm{loc}^\mathrm{onset}$ and a global superconducting transition at…
We have introduced here a simple, single step and cost effective broad ion beam technique for preparation of nanoscale electronic, magnetic, optical and mechanical devices without the need of resist, mask, or focused electron and ion beams.…
Directly imaging all atoms constituting a material and, maybe more importantly, crystalline defects that dictate materials' properties, remains a formidable challenge. Here, we propose a new approach to chemistry-sensitive field-ion…
We present and derive a technique for the introduction of defects into a beam model based on the Cosserat theory of rods. The technique is designed for the derivation of component models of non-ideal rods for use in MEMS devices. We also…