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Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated…
Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated…
An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two…
Experimental studies of microdosimetry in therapeutic ion beams have been performed using several detectors. The differences among them lie on the shapes, the site sizes, and the material. Coin-shaped solid-state detectors made of silicon…
In laser-driven wakefield, ionization induced injection is an efficient way to inject electrons in the plasma wave. A detailed study on the beam dynamics under the influence of beam loading effects, which can be controlled by the…
Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major…
The negative ion density and temperature are the two fundamental parameters that are necessary to quantify the properties of electronegative discharges. However, determining these parameters by means of electrostatic probes can be quite…
Optical systems capable of generating fields with sub-wavelength spatial features have become standard in science and engineering research and industry. Pertinent examples include atom- and ion-based quantum computers and optical…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
Efficient charge-carrier injection from air-stable electrodes into organic semiconductors (OSCs) is essential for fabricating solution-processed organic optoelectronic devices under ambient conditions. Today, this is typically achieved by…
The switching and optical properties of phase-change thin films are actively investigated for future smart optical devices. The possibility of having more than one stable state, the large optical contrast between phases, and the fast and…
In recent years, compact nanodosimetric detectors based on ion multiplication in low-pressure gas have been developed and gained attention in the scientific community. These detectors use strong electric fields to collect and multiply…
CdTe and its alloy CdTeSe are widely used in optoelectronic devices, such as radiation detectors and solar cells, due to their superior electrical properties. However, the formation of defects and defect complexes in these materials can…
We present a fingerprint-like method to analyze material defects after energetic particle irradiation by computing a rotation invariant descriptor vector for each atom of a given sample. For ordered solids this new method is easy to use,…
Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant…
Silicon detectors typically require an insensitive area around their periphery to accommodate guard rings, which help maintain the electric field uniformity around edge pixels and isolate the high leakage current from the physical edges of…
Various techniques are used to detect the presence of charged particles stored in electromagnetic traps, their energy, their mass, or their internal states. Detection methods can rely on the variation of the number of trapped particles…
Ion Beam Sputtering (IBS) is a cost-effective technique able to produce ordered nanopatterns on the surfaces of different materials. To date, most theoretical studies of this process have focused on systems which become amorphous under…
Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible…
We present a unitary quantum control scheme that produces a highly monochromatic ion beam from a Paul trap. Our protocol is implementable by supplying the segmented electrodes with voltages of the order of Volts, which mitigates the impact…