Related papers: Interplay between Quantum Well Width and Interface…
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…
Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2…
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were…
Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…
We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on…
The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$-factor,…
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high…
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…
Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic…
We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is…
In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and…
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced,…
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong…
Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present…
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…