Related papers: Interplay between Quantum Well Width and Interface…
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…
In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective…
A van der Waals (vdW) charge qubit, electrostatically confined within two-dimensional (2D) vdW materials, is proposed as building block of future quantum computers. Its characteristics are systematically evaluated with respect to its…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs…
Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the…
Evaluation of critical bandstructure and quantum transport parameters in two-dimensional systems is challenging when competition emerges among different energy scales shaping quantum oscillations in a magnetic field. Here we overcome this…
A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance…
The observation of the fractional quantum Hall (FQH) effect in 2D electron gases ushered in investigations of topological phases driven by strong electron correlations. Their remarkable features include fractionalized elementary…
Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…
Motivated by recent all optical NMR experiments\cite{Awschalom1,Awschalom2} on GaAs quantum wells, we propose new experiments that would involve creating spatially modulated nuclear spin profiles. Due to the hyperfine coupling these would…
Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a…
Intra and intersubband scattering rates and electron capture rates are considered when mediated by hybrid optical phonons in an AlAs/GaAs/AlAs double heterostructure confined between two outer metallic barriers. In evaluating scattering…
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field…
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…