Related papers: Ultra-high strain in epitaxial silicon carbide nan…
Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In…
This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame…
This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such…
For decades, mechanical resonators with high sensitivity have been realized using thin-film materials under high tensile loads. Although there have been remarkable strides in achieving low-dissipation mechanical sensors by utilizing high…
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We…
In newly discovered topological crystalline insulators (TCIs), the unique crystalline protection of the surface state (SS) band structure has led to a series of intriguing predictions of strain generated phenomena, from the appearance of…
The recent discovery of high-transition temperature ($T_\mathrm{c}$) superconductivity in pressurized La$_{3}$Ni$_{2}$O$_{7}$ bulk crystals has attracted keen attention due to its characteristic energy diagram of $e_{g}$ orbitals,…
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material…
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers…
The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively…
We study the effect of uniaxial strain on the band structure of ZrSe$_3$, a semiconducting material with a marked in-plane structural anisotropy. By using a modified 3-point bending test apparatus, thin ZrSe$_3$ flakes were subjected to…
Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures…
It is widely accepted that the properties of most semiconductor nanocrystals can be tuned by their core size, shape and material. In covalent semiconductor nanocrystal materials, such as silicon, germanium or carbon, certain degree of…
A central focus in high strain rate research is understanding the dynamic behavior of materials at strain rates where a strength upturn is observed. While strength upturns at strain rates of $10^3$ to $10^4~\mathrm{s}^{-1}$ have been widely…
Transition metal dichalcogenides and related layered materials in their monolayer and a few layers thicknesses regime provide a promising optoelectronic platform for exploring the excitonic- and many-body physics. Strain engineering has…
Silicon carbide (SiC) excels in its outstanding mechanical properties, which are widely studied in Microelectromechanical systems (MEMS). Recently, the mechanical tuning of color centers in 4H-SiC has been demonstrated, broadening its…
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a…
We predict the existence of new two dimensional silicon carbide nanostructure employing ab initio density-functional theory calculations. These structures are composed of tetragonal and hexagonal rings with C-C and Si-C bonds arranged in a…