Related papers: High Performance CNFET-based Ternary Full Adders
Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80%…
Several nanoelectronic devices have been already proved. However, no architecture which makes use of them provides a feasible opportunity to build medium/large systems. Nanoarchitecture proposals only solve a small part of the problems…
This brief proposes an analytical approach to model the dc electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistor (JLNW-FET). The model includes explicit expressions, taking into account the…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
Despite the great promise of carbon nanotube field effect transistors (CNT FETs) for applications in chemical and biochemical detection, a quantitative understanding of sensor responses is lacking. To explore the role of electrostatics in…
The development of lightweight flex PCBs and nanowire-based thermal interfaces for low-mass, high-performance detector modules are presented. A novel manufacturing approach targeting flex circuits with double-sided pad access, assembled…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
We have theoretically investigated thermoelectric (TE) effects of narrow-gap single-walled carbon nanotubes (SWCNTs) with randomly substituted nitrogen (N) impurities, i.e., N-substituted (20,0) SWCNTs with a band gap of 0.497 eV. For such…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
Catalyst design is crucial for materials synthesis, especially for complex reaction networks. Strategies like collaborative catalytic systems and multifunctional catalysts are effective but face challenges at the nanoscale. Carbon nanotube…
Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes,…
The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to binding of charged molecules provide a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling…
Electromagnetic characteristics of single-walled finite-length carbon nanotubes - absorption cross-section and field enhancement in the near zone - are theoretically studied in a wide frequency range from terahertz to visible. The analysis…
We report conductance measurements on multiwall carbon nanotubes in a perpendicular magnetic field. A gate electrode with large capacitance is used to considerably vary the nanotube Fermi level. This enables us to search for signatures of…
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…
Measurements of current-voltage characteristics from ideal carbon nanotube (CNT) field electron emitters of small apex radius have shown that these emitters can exhibit a linear Fowler-Nordheim (FN) plot [e.g., Dean and Chalamala, Appl.…
High performance nanocomposites require well dispersion and high alignment of the nanometer-sized components, at a high mass or volume fraction as well. However, the road towards such composite structure is severely hindered due to the easy…
We investigate the operational characteristics of a nanorelay based on a conducting carbon nanotube placed on a terrace in a silicon substrate. The nanorelay is a three terminal device that acts as a switch in the GHz regime. Potential…
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band…
In recent years, neuromorphic computing has gained attention as a promising approach to enhance computing efficiency. Among existing approaches, neurotransistors have emerged as a particularly promising option as they accurately represent…