Related papers: Anisotropy and suppression of spin--orbit interact…
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with…
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…
Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and…
In bulk n-GaAs epilayers doped near the metal-insulator transition, we study the evolution of electron spin lifetime $\tau_s$ as a function of applied lateral electrical bias $E_x$. $\tau_s$ is measured via the Hanle effect using…
A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in…
Pauli exclusion principle can lead to a supression of transport through double quantum dots, even if both quantum dots are connected by a resonant driving ac field. In this work, we study how this effect, known as spin blockade, can be…
We propose a novel approach to explore the properties of a quantum dot in the presence of the spin-orbit interaction and in a tilted magnetic field. The spin-orbit coupling within the quantum dot manifest itself as anti-crossing of the…
The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade…
We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we…
We report a systematic study of the spin relaxation anisotropy between single electron Zeeman sublevels in cuboidal GaAs quantum dots (QDs). The QDs are subject to an in-plane magnetic field. As the field orientation varies, the relaxation…
We present a semi-automated computer-assisted method to generate and calculate diagrams in the disorder averaging approach to disordered 2D conductors with intrinsic spin-orbit interaction (SOI). As an application, we calculate the effect…
Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron g-tensor, and the origin of previously discovered all-optical nuclear magnetic…
We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping…
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor…
The spin dynamics in a quantum wire with a Rashba spin orbit interaction (SOI) is shown to be controllable via sub-picosecond electromagnetic pulses shaped appropriately. If the light polarization vector is along the wire's direction, the…
We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the…
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs…
In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the 8-band $kp$ model and calculate phonon-assisted spin relaxation rates for the ground-state…