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The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more…

Equilibrium crystal structures, electron band dispersions and band gap values of layered GaSe and InSe semiconductors, each being represented by four polytypes, are studied via first-principles calculations within the density functional…

Materials Science · Physics 2018-08-10 Juliana Srour , Michael Badawi , Fouad El Haj Hassan , Andrei Postnikov

The electronic and the optical properties of metallic nitride (MN) monolayers are studied using a DFT formalism. In most of these monolayers, the electron density of the metallic atoms is much higher than that of the nitride atoms, and…

Materials Science · Physics 2022-04-05 Nzar Rauf Abdullah , Botan Jawdat Abdullah , Vidar Gudmundsson

A major hurdle in understanding the phase diagram of twisted bilayer graphene (TBLG) are the roles of lattice relaxation and electronic structure on isolated band flattening near magic twist angles. In this work, the authors develop an…

Mesoscale and Nanoscale Physics · Physics 2024-03-28 Shivesh Pathak , Tawfiqur Rakib , Run Hou , Andriy Nevidomskyy , Elif Ertekin , Harley T. Johnson , Lucas K. Wagner

The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the…

This article is a review o over theory of superconductivity, which is constructed for systems with two overlapping energy bands at the Fermi surface and with arbitrary charge carrier density.There is taken into account all possible kinds of…

Superconductivity · Physics 2007-05-23 M. E. Palistrant

CdSe nanoplatelets show perfectly quantized thicknesses of few monolayers. They present a situation of extreme, yet well defined quantum confinement. Due to large dielectric contrast between the semiconductor and its ligand environment,…

We have developed the tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C'A' grown from the zinc-blende semiconductors CA and C'A' along the crystallographic direction [001]. The sp^3s*…

Mesoscale and Nanoscale Physics · Physics 2008-10-07 E. L. Ivchenko , M. O. Nestoklon

In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…

The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics…

Materials Science · Physics 2023-09-21 Muhammad Sufyan Ramzan , Tomasz Woźniak , Agnieszka Kuc , Caterina Cocchi

Transition metal dichalcogenide materials $MX_2 (M=Mo,W;X=S,Se)$ are being thoroughly studied due to their novel two-dimensional structure, that is associated with exceptional optical and transport properties. From a computational point of…

Materials Science · Physics 2020-02-12 James Sifuna , Pablo García-Fernández , George S. Manyali , George Amolo , Javier Junquera

Monolayers of group VA elements have attracted great attention with the rising of black phosphorus. Here, we derive a simple tight-binding model for monolayer grey arsenic, referred as arsenene (ML-As), based on the first-principles…

Materials Science · Physics 2018-09-19 Jin Yu , Mikhail I. Katsnelson , Shengjun Yuan

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

We study the temperature-dependent optical properties of gold over a broad energy spectrum covering photon energies below and above the interband threshold. We apply a semi-analytical Drude-Lorentz model with temperature-dependent…

Materials Science · Physics 2024-04-26 P. D. Ndione , S. T. Weber , D. O. Gericke , B. Rethfeld

Synchrotron-based angle-resolved photoemission spectroscopy is used to determine the electronic structure of layered SnSe, which was recently turned out to be a potential thermoelectric material. We observe that the top of the valence band…

The simplest approach to deal with light excitations in direct-gap semiconductors is to model them as a two-band system: one conduction and one valence band. For such models, particularly simple analytical expressions are known to exist for…

Materials Science · Physics 2022-10-12 W. -R. Hannes , M. F. Ciappina

The valence flat bands in transition metal dichalcogenide (TMD) heterobilayers are shown to exhibit strong intralayer spin-orbit coupling. This is reflected in a simple tight-binding model with spin-dependent complex hoppings based on the…

Mesoscale and Nanoscale Physics · Physics 2022-06-01 Louk Rademaker

Lead and tin chalcogenides have been studied widely due to their promising thermoelectric (TE) properties. Further enhancement in their TE efficiency has been reported upon the reduction of the dimension, which is an important feature in…

Materials Science · Physics 2020-10-14 Abhiyan Pandit , Bothina Hamad

We propose an accurate tight-binding parametrization for the band structure of MoS$_2$ monolayers near the main energy gap. We introduce a generic and straightforward derivation for the band energies equations that could be employed for…

Mesoscale and Nanoscale Physics · Physics 2015-09-02 E. Ridolfi , D. Le , T. S. Rahman , E. R. Mucciolo , C. H. Lewenkopf

Two-dimensional (2D) WS2 films were deposited on SiO2 wafers, and the related interfacial properties were investigated by high-resolution x-ray photoelectron spectroscopy (XPS) and first-principles calculations. Using the direct (indirect)…

Materials Science · Physics 2022-05-19 Changjie Zhou , Huili Zhu , Weifeng Yang , Qiubao Lin , Tongchang Zheng , Lan Yang , Shuqiong Lan